Interface properties study on SiC MOS with high-k hafnium silicate gate dielectric

Hafnium-based High-k Gate Dielectrics

16 Hafnium - based High - k Gate Dielectrics

Scaling of silicon dioxide dielectrics has once been viewed as an effective approach to enhance transistor performance in complementary metal-oxide semiconductor (C-MOS) technologies as predicted by Moore’s law [1]. Thus, in the past few decades, reduction in the thickness of silicon dioxide gate dielectrics has enabled increased numbers of transistors per chip with enhanced circuit functionali...

Channel thickness dependency of high-k gate dielectric based double-gate CMOS inverter

This work investigates the channel thickness dependency of high-k gate dielectric-based complementary metal-oxide-semiconductor (CMOS) inverter circuit built using a conventional double-gate metal gate oxide semiconductor field-effect transistor (DG-MOSFET). It is espied that the use of high-k dielectric as a gate oxide in n/p DG-MOSFET based CMOS inverter results in a high noise margin as well...

Zirconium Oxide Mixed Tantalum Oxide High-K Gate Dielectric Films for Metal-Oxide-Semiconductor (MOS) Devices

Hafnium oxide mixed tantalum oxide (HTO) and Zirconium oxide mixed tantalum oxide (ZTO) layers were deposited on chemically cleaned p-Si substrate using RF magnetron sputtering technique. The oxide/Si stacks were annealed in oxygen for 30 minutes at 400 °C as on initial investigation. Both composition and structural properties were absolutely interesting to move further for electrical measureme...

Application of Look-up Table Approach to High-K Gate Dielectric MOS Transistor circuits

In this paper, we study the circuit performance issues of high-K gate dielectric MOSFETs using the Look-up Table (LUT) approach. The LUT approach is implemented in a public-domain circuit simulator SEQUEL. We observed an excellent match between LUT simulator and mixed mode simulations using MEDICI. This work clearly demonstrates the predictive power of the new simulator, as it enables evaluatio...